Of Gate Recessed GaN / AlGaN FETs
نویسنده
چکیده
To my loving parents who always provided me a shelter under strong sun shines; My brothers who are my arms of strength, courage and directors; A precious gift of God, My sisters
منابع مشابه
Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness
We investigated the influence of the thickness of the AlN interlayer for InAlN/GaN and InAlN/AlGaN/GaN heterostructures. The AlN thickness strongly affects the surface morphology and electron mobility of the InAlN/GaN structures. The rms roughness of the surface increases from 0.35 to 1.2 nm with increasing AlN thickness from 0 to 1.5 nm. Large pits are generated when the AlN is thicker than 1 ...
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